Scaling Effects on Thermal and Gate Induced Noise of Small Geometry LDD Mosfets

Scaling Effects on Thermal and Gate Induced Noise of Small Geometry LDD Mosfets
EKTA KALRA, ANIL KUMAR, SUBHASIS HALDAR∗, AND R.S.GUPTA Sr. Member IEEE, Fellow IETE.
SEMICONDUCTOR DEVICE RESEARCH LABORATORY DEPARTMENT OF ELECTRONIC SCIENCE UNIVERSITY OF DELHI SOUTH CAMPUS NEW DELHI-110021,INDIA ∗DEPARTMENT OF PHYSICS, MOTI LAL NEHRU COLLEGE BENITO JUAREZ ROAD, NEW DELHI-110021

https://acadjournal.com/2000/V1/PART1/P1/AOIJ_KALRA.PDF

Leave a Reply

Your email address will not be published. Required fields are marked *